Description

FREE Notes on MOS ICs & Technology (integrated circuit) foreasy learning and quick learning. This App is actually a FREEhandbook, which covers all the topics of the subject. You canconsider this App as a notes which professors guides with in aclassroom. You can very easily pass and succeed in your exams andinterviews if you have this App in your mobile phone, and give anoverview for a few days. It covers 114 topics of MOS ICs &Technology in detail. These 114 topics are divided in 8 units Someof topics Covered in this application are: 1. Moore's Law. 2.Comparison of available technologies 3. Basic MOS Transistors 4.Enhancement mode Transistor action: 5. NMOS Fabrication: 6. CMOSfabrication- P-WELL PROCESS 7. CMOS fabrication-N-WELL PROCESS: 8.CMOS fabrication-Twin-tub process 9. Bi-CMOS technology: - (BipolarCMOS): 10. Production of e-beam masks 11. Introduction to MOSTransistor 12. Relationship between Vgs and Ids, for a fixed Vds13. MOS equations (Basic DC equations): 14. Second Order Effects15. CMOS INVETER CHARACTERISTICS 16. Inverter DC Characteristics17. Graphical Derivation of Inverter DC Characteristics 18. NoiseMargin 19. Static Load MOS inverters 20. Transmission gates 21.Tristate Inverter 22. Stick diagrams-Encodings for NMOS process 23.Encodings for CMOS process 24. Encoding for BJT and MOSFETs 25.NMOS and CMOS Design style 26. Design Rules - MOS ICs &Technology 27. Via 28. CMOS lambda based design rules 29. Orbit 2umCMOS process 30. Resistance estimation. 31. Sheet resistance of mostransistors 32. Capacitance estimation 33. Delay 34. Inverterdelays 35. Formal estimation of delay 36. Driving large capacitiveload 37. Optimum value of f 38. Super buffer 39. Bicmos drivers 40.Propagation delay 41. Other sources of capacitance 42. Choice oflayers 43. Scaling of mos devices 44. Basic physical design anoverview 45. Basic physical design an overview 46. Schematic andlayout of basic gates-Inverter Gate 47. Schematic and layout ofbasic gates-NAND and NOR Gate 48. Transmission gate 49. CMOSstandard cell design 50. Layout optimization for performance 51.General layout guidelines 52. BICMOS Logic 53. Pseudo nmos logic54. Other variations of pseudo nmos- Multi drain logic and Gangedlogic 55. Other variations of pseudo nmos- Dynamic cmos logic 56.Other variations of pseudo nmos- CLOCKED CMOS LOGIC (C2MOS) 57.CMOS domino logic 58. Cascaded voltage switch logic 59. Passtransistor logic 60. CMOS technology logic circuit structures 61.Scaling of MOS Circuits 62. Technology Scaling 63. InternationalTechnology Roadmap for Semiconductors (ITRS) 64. Scaling Models andScaling Factors for Device Parameters 65. Implications of Scaling66. Interconnect Woes 67. Reachable Radius 68. Dynamic and StaticPower 69. Productivity and Physical Limits 70. Limitations ofScaling 71. Substrate doping 72. Depletion width 73. Limits ofminiaturization 74. Limits of interconnect and contact resistance75. Limits due to subthreshold currents 76. Limits due tosubthreshold currents 77. System 78. VLSI design flow 79. 3Structured Design Approach 80. Regularity 81. MOSFET as a Switch82. Parallel and series connection of switches 83. CMOS INVERTER84. NAND gate Design 85. NOR gate Design 86. CMOS Properties 87.Complex gates 88. Complex gates AOI IMPORTANT LINKS Feedback: Shareyour feedback at [email protected] Social links Facebook :https://www.facebook.com/EngineeringEasy/ Twitter :https://twitter.com/easyengineerinWebsite:http://www.engineeringapps.net/ All you a very HappyLearning